ipd600n25n3 g opti mos tm 3 power-transistor features ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 175 c operating temperature ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target application ? halogen-free according to iec61249-2-21 ? ideal for high-frequency switching and synchronous rectification maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 25 a t c =100 c 18 pulsed drain current 2) i d,pulse t c =25 c 100 avalanche energy, single pulse e as i d =25 a, r gs =25 210 mj gate source voltage v gs 20 v power dissipation p tot t c =25 c 136 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 2) see figure 3 value 1) j-std20 and jesd22 v ds 250 v r ds(on),max 60 m i d 25 a product summary type ipd600n25n3 g package pg-to252-3 marking 600n25n rev. 2.2 page 1 2009-10-23 www..net
ipd600n25n3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.1 k/w r thja minimal footprint - - 75 6 cm2 cooling area 3) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 250 - - v gate threshold voltage v gs(th) v ds = v gs , i d =90 a 234 zero gate voltage drain current i dss v ds =200 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =200 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =25 a -5160 m gate resistance r g - 2.5 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =25 a 24 47 - s values thermal resistance, junction - ambient 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 2.2 page 2 2009-10-23
ipd600n25n3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 1770 2350 pf output capacitance c oss - 101 134 reverse transfer capacitance c rss -3- turn-on delay time t d(on) -10-ns rise time t r -10- turn-off delay time t d(off) -22- fall time t f -8- gate char g e characteristics 4) gate to source charge q gs -8-nc gate to drain charge q gd -2- switching charge q sw -5- gate charge total q g -2229 gate plateau voltage v plateau - 4.3 - v output charge q oss v dd =100 v, v gs =0 v -4560nc reverse diode diode continous forward current i s - - 25 a diode pulse current i s,pulse - - 100 diode forward voltage v sd v gs =0 v, i f =25 a, t j =25 c - 0.9 1.2 v reverse recovery time t rr - 114 ns reverse recovery charge q rr - 700 - nc 4) see figure 16 for gate charge parameter definition v r =100 v, i f =12a, d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =100 v, f =1 mhz v dd =100 v, v gs =10 v, i d =12 a, r g =1.6 v dd =100 v, i d =12 a, v gs =0 to 10 v rev. 2.2 page 3 2009-10-23
ipd600n25n3 g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 20 40 60 80 100 120 140 160 0 50 100 150 200 t c [c] p tot [w] 0 10 20 30 0 50 100 150 200 t c [c] i d [a] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] rev. 2.2 page 4 2009-10-23
ipd600n25n3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 4.5 v 5 v 7 v 10 v 0 20 40 60 80 100 0102030 i d [a] r ds(on) [m ] 25 c 175 c 0 10 20 30 40 02468 v gs [v] i d [a] 0 10 20 30 40 50 60 70 80 0255075 i d [a] g fs [s] 4.5 v 5 v 7 v 10 v 0 10 20 30 40 50 60 012345 v ds [v] i d [a] rev. 2.2 page 5 2009-10-23
ipd600n25n3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =25 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98% 0 20 40 60 80 100 120 140 160 180 200 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ] 90 a 900 a 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 1 10 2 10 3 10 4 0 40 80 120 160 v ds [v] c [pf] 25 c 175 c 25c, 98% 175c, 98% 10 3 10 2 10 1 10 0 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 2.2 page 6 2009-10-23
ipd600n25n3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 v gs =f( q gate ); i d =12 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 50 v 125 v 200 v 0 2 4 6 8 10 0 102030 q gate [nc] v gs [v] 220 230 240 250 260 270 280 290 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 1 10 100 1 10 100 1000 t av [s] i as [a] rev. 2.2 page 7 2009-10-23
ipd600n25n3 g pg-to252-3: outline rev. 2.2 page 8 2009-10-23
ipd600n25n3 g published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be reg arded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, infineon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and condi tions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). on the types in question, please contact the nearest infineon t echnologies office. infineon technologies components may be used in life-support de vices or systems only with the express written approval of infineon technologies, if a fai lure of such components can reasonably be expected to cause the failure of that life-suppor t device or system or to affect the safety or effectiveness of that device or system. life supp ort devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to as sume that the health of the user or other persons may be endangered. rev. 2.2 page 9 2009-10-23
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